Spice model for LED

Spice Model for High Brightness LED

Microsemi model.
.model UPWLEDxx D(Is=1E-30 N=1.923 Rs=32.09 Eg=3.6 Cjo=63.87p
+ M=.1513 Vj=2.02 Fc=.5 Isr=1.304m Nr=3.4Meg Bv=12 Ibv=369.5u
+ Tt=432.8n Xti=5)
Symbol Name Parameter Units Default
IS IS Saturation current (diode equation) A 1E-14
RS RS Parsitic resistance (series resistance) Ω 0
n N Emission coefficient, 1 to 2 - 1
τD TT Transit time s 0
CD(0) CJO Zero-bias junction capacitance F 0
φ0 VJ Junction potential V 1
m M Junction grading coefficient - 0.5
- - 0.33 for linearly graded junction - -
- - 0.5 for abrupt junction - -
Eg EG Activation energy: eV 1.11
- - Si: 1.11 - -
- - Ge: 0.67 - -
- - Schottky: 0.69 - -
pi XTI IS temperature exponent - 3.0
- - pn junction: 3.0 - -
- - Schottky: 2.0 - -
kf KF Flicker noise coefficient - 0
af AF Flicker noise exponent - 1
FC FC Forward bias depletion capacitance coefficient - 0.5
BV BV Reverse breakdown voltage V ∞
IBV IBV Reverse breakdown current A 1E-3

Isr with NR controls the reverse biased leakage.
• IS controls forward and reverse current against voltage.
• N controls forward current against voltage.
• RS controls forward voltage at high current.
• CJO, M and VJ control variation of capacitance with voltage.
• BV and IBV control reverse breakdown characteristics.
• TT controls switching reverse recovery characteristics.
• ISR and NR control reverse biased leakage.
• EG controls barrier height.
• FC forward bias depletion capacitance coefficient.

http://www.cutestudio.net/data/products/spice/doc/simulation/simulators/sumos/non_linear/diode/index.php